THE FACT ABOUT N TYPE GE THAT NO ONE IS SUGGESTING

≤ 0.fifteen) is epitaxially grown over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the structure is cycled by means of oxidizing and annealing stages. A result of the preferential oxidation of Si about Ge [sixty eight], the initial Si1–The existence of germanium was predicted by Russian chemist Dmitri Mendel